2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics. 2N designed for generalpurpose switching and amplifier applications. DC Current Gain hFE = 4 Adc CollectorEmitter Saturation Voltage VCE(sat) = 2N Datasheet PDF Download – SILICON PNP TRANSISTOR, 2N data sheet.
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In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N With an “infinite” heatsink, that is: It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids.
Retrieved 31 October The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps.
PNP SILICON TRANSISTOR
Build your own low-power transmitters: Other manufacturers around this time also would specify similar values e. KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications. The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.
Wikimedia Commons has media related to 2N Modern 2N datasheets often, but not always, specify f T of 2. KD are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor.
2N datasheet, Pinout ,application circuits PNP SILICON TRANSISTOR
The art of electronics 2nd ed. The KD have higher power and higher current than 2N It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them.
Views Read Edit View history. It has a transition frequency of 2. The frequency at which gain begins to drop off may be much lower, see below.
The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters.
From Wikipedia, the free datasheer.
Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies. Retrieved from ” https: Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers.
Also the higher frequency response has improved performance when used in audio amplifiers. It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet. The robot builder’s bonanza 2nd ed. The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.
Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range. An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0.
RCA by had changed their specification to give 2. Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion.
The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists. Variants with higher voltage datadheet e. The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly,    else physical damage or worsened power handling may result, datashdet with cases or heatsinks that are not perfectly flat.
2N 데이터시트(PDF) – Unisonic Technologies
The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected. It was produced exclusively by the Czechoslovakian electronics company Tesla. The team of design, production, and applications engineers received RCA Electronic Components achievement awards in Commons category link from Wikidata.
This page was last edited on 22 Novemberat In other projects Wikimedia Commons. It often has a transition frequency of around 3. With datwsheet to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology.